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this is information on a product in full production. may 2014 docid023936 rev 2 1/14 STL13DP10F6 dual p-channel 100 v, 0.136 typ., 3.3 a stripfet? vi deepgate? power mosfet in a powerflat? 5x6 double island datasheet - production data figure 1. internal schematic diagram features ? r ds(on) * q g industry benchmark ? extremely low on-resistance r ds(on) ? high avalanche ruggedness ? low gate drive power losses applications ? switching applications description this device is a dual p-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. powerflat? 5x6 double island 1 4 8 5 1 4 order code v ds r ds(on) max. i d STL13DP10F6 100 v 0.18 ? 3.3 a table 1. device summary order code marking packages packaging STL13DP10F6 13dp10f6 powerflat? 5x6 double island tape and reel www.st.com
contents STL13DP10F6 2/14 docid023936 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid023936 rev 2 3/14 STL13DP10F6 electrical ratings 14 1 electrical ratings note: for the p-channel power mosfet the actual polarity of the voltages and the current must be reversed. table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 100 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according r thj-c drain current (continuous) at t c = 25 c 13 a i d (1) drain current (continuous) at t c = 100 c 7.3 a i d (2) 2. the value is rated according r thj-pcb drain current (continuous) at t pcb = 25 c 3.3 a i d (2) drain current (continuous) at t pcb =100c 2 a i dm (2) , (3) 3. pulse width limited by safe operating area drain current (pulsed) 13.2 a p tot (1) total dissipation at t c = 25c 62.5 w p tot (2) total dissipation at t pcb = 25c 4 w t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 2 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec thermal resistance junction-pcb 32 c/w
electrical characteristics STL13DP10F6 4/14 docid023936 rev 2 2 electrical characteristics (t case =25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a 100 v i dss zero gate voltage drain current v gs = 0, v ds = 100 v 1 a v gs = 0, v ds = 100 v, t c =125 c 10 a i gss gate body leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 24v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 1.7 a 0.136 0.18 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =25 v, f=1 mhz, v gs =0 -864 - pf c oss output capacitance - 45 - pf c rss reverse transfer capacitance -25 - pf q g total gate charge v dd =50 v, i d = 3.3 a v gs =10 v (see figure 14 ) - 16.5 - nc q gs gate-source charge - 3.5 - nc q gd gate-drain charge - 3.8 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =50 v, i d = 1.7 a, r g =4.7 , v gs =10 v (see figure 13 ) - 10.5 - ns t r rise time - 4.8 - ns t d(off) turn-off delay time - 24 - ns t f fall time - 4.5 - ns
docid023936 rev 2 5/14 STL13DP10F6 electrical characteristics 14 note: for the p-channel power mosfet the actual polarity of the voltages and the current must be reversed. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 3.3 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 13.2 a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5% forward on voltage i sd = 3.3 a, v gs =0 -1.1v t rr reverse recovery time i sd = 3.3 a, di/dt = 100 a/ s, v dd =80 v, t j =150 c -26.5 ns q rr reverse recovery charge - 36.5 nc i rrm reverse recovery current - 2.7 a
electrical characteristics STL13DP10F6 6/14 docid023936 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq pv pv ?v 7m ?& 7sfe ?& 6lqjohsxovh *,3*6$ 6lqjohsxovh g . w s v qdc *,3*6$ , ' 9 '6 9 $ 9 9 9 *6 9 9 *,3*6$ , ' 9 *6 9 $ 9 '6 9 *,3*6$ 9 *6 4 j q& 9 9 '' 9 , ' $ *,3*6$ 5 '6rq , ' $ p 9 *6 9 *,3*6$
docid023936 rev 2 7/14 STL13DP10F6 electrical characteristics 14 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. normalized v (br)dss vs temperature figure 12. source-drain diode forward characteristics & 9 '6 9 s) &lvv &rvv &uvv *,3*6$ 9 *6wk 7 - ?& qrup , ' ?$ *,3*6$ 5 '6rq 7 - ?& qrup , ' $ 9 *6 9 *,3*6$ 9 %5'66 7 - ?& qrup , ' p$ *,3*6$ 9 6' , 6' $ 9 7 - ?& 7 - ?& 7 - ?& *,3*6$
test circuits STL13DP10F6 8/14 docid023936 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times am11255v1 am11256v1 am11257v1
docid023936 rev 2 9/14 STL13DP10F6 package mechanical data 14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL13DP10F6 10/14 docid023936 rev 2 figure 16. powerflat? 5x6 double island type r-a drawing bottom view 5 8 4 1 pin 1 identification side view top view pin 1 identification . 4 5 8 1 8256945_rev.h_type_r
docid023936 rev 2 11/14 STL13DP10F6 package mechanical data 14 table 8. powerflat? 5x6 double island type r-a mechanical data ref. dimensions (mm) min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d5.20 e6.15 d2 1.68 1.88 e2 3.50 3.70 d3 1.68 1.88 e3 3.50 3.70 e4 0.55 0.75 e1.27 l 0.60 0.80 k 1.275 1.575
package mechanical data STL13DP10F6 12/14 docid023936 rev 2 figure 17. powerflat? 5x6 double island type r-a drawing recommended footprint (dimensions are in mm) footprint
docid023936 rev 2 13/14 STL13DP10F6 revision history 14 5 revision history table 9. document revision history date revision changes 19-nov-2012 1 first release. 30-may-2014 2 ? document status promoted from target to production data ? modified: title ? modified: r ds(on) typical value in table 4 , 5 , 6 , 7 and 8 ? added: section 2.1: electrical characteristics (curves) ? updated: section 4: package mechanical data ? minor text changes
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